KSE701资料

KSE700/701/702/703KSE700/701/702/703Monolithic Construction With Built-in Base-Emitter Resistors•High DC Current Gain : hFE= 750 (Min.) @ IC= -1.5 and -2.0A DC•Complement to KSE800/801/802/8031TO-1261. Emitter 2.Collector 3.BasePNP Epitaxial Silicon Darlington TransistorAbsolute Maximum Ratings TC=25°C unless otherwise notedSym-bol VCBO VCEO VEBO IC IB PC TJEquivalent CircuitCParameter Collector- Base Voltage : KSE700/701 : KSE702/703 Collector-Emitter Voltage : KSE700/701 : KSE702/703 Emitter- Base Voltage Collector Current Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage TemperatureValue - 60 - 80 - 60 - 80 - 5 - 4 - 0.1 40 150- 55 ~ 150UnitsVVVVVAAW°C°CBR1R2ER1≅10kΩR2≅0.6kΩ TSTGElectrical Characteristics TC=25°C unless otherwise notedSymbol BVCEO ICEO ICBOParameter Collector-Emitter Breakdown Voltage: KSE700/701: KSE702/703 Collector Cut-off Current: KSE700/701: KSE702/703 Collector Cut-off CurrentTest Condition IC = - 10mA, IB = 0 VCE = - 60V, IB = 0 VCE = - 80V, IB = 0 VCB = Rated BVCEO, IE = 0 VCB = Rated BVCEO, IE = 0 @TC = 100°C VBE = - 5V, IC = 0 VCE = - 3V, IC = - 1.5A VCE = - 3V, IC = - 2A VCE = - 3V, IC = - 4A IC = - 1.5A, IB = - 30mA IC = - 2A, IB = - 40mA IC = - 4A, IB = - 40mA VCE = - 3V, IC = - 1.5A VCE = - 3V, IC = - 2A VCE = - 3V, IC = - 4A750750100-2.5-2.8-3-1.2-2.5 -3VVVVVVRev. A2, June 2001

Min.-60-80Max.UnitsVV-100-100-100-500 -2µAµAµAµAmA IEBO hFE Emitter Cut-off Current DC Current Gain: KSE700/702: KSE701/703: ALL DEVICES Collector-Emitter Saturation Voltage: KSE700/702: KSE701/703: ALL DEVICES Base-Emitter On Voltage: KSE700/702: KSE701/703: ALL DEVICES VCE(sat) VBE(on)©2001 Fairchild Semiconductor Corporation

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KSE700/701/702/703Typical Characteristics -5 10kIB= -1000µsIB= -900µsIB= -800µsIB= -700µsIB= -600µsIB= -500µsVCE = -3V00µsIB= -40µsIB= -300µIB= -20sIC[A],COLLECTOR CURRENT-4hFE, DC CURRENT GAIN1k-3 -2IB= -100µs100-1-0-0-1-2-3-4-510-0.01-0.1-1-10VCE(V),COLLECTOR-EMITTER VOLTAGEIC[A], COLLECTOR CURRENTFigure 1. Static CharacteristicFigure 2. DC current Gain 1000VBE(sat), VCE(sat)[V], SATURATION VOLTAGE-100IC = 500 IBf=0.1MHZ IE=0Cob[pF], CAPACITANCE-10100VBE(sat)-1 10VCE(sat)-0.1-0.01-0.1-1-101-0.01-0.1-1-10-100IC[A], COLLECTOR CURRENTVCB[V], COLLECTOR-BASE VOLTAGEFigure 3. Collector-Emitter Saturation Voltage Base-Emitter Saturation VoltageFigure 4. Collector Output Capacitance -10060 50IC[A], COLLECTOR CURRENTPC[W], POWER DISSIPATION-104030 -120MJE700/701MJE702/703-0.1-1-10-100-100010002550o75100125150175VCE[V], COLLECTOR-EMITTER VOLTAGETC[C], CASE TEMPERATUREFigure 5. Safe Operating AreaFigure 6. Power Derating©2001 Fairchild Semiconductor CorporationRev. A2, June 2001

010µs1ms5msD.C.元器件交易网www.cecb2b.com

KSE700/701/702/703Package DemensionsTO-1263.90 ±0.108.00 ±0.303.25 ±0.20ø3.20 ±0.1014.20MAX11.00 ±0.20(1.00)0.75 ±0.101.60 ±0.100.75 ±0.1013.06 ±0.30(0.50)1.75 ±0.20#12.28TYP[2.28±0.20]2.28TYP[2.28±0.20]16.10 ±0.200.50–0.05+0.10Dimensions in Millimeters©2001 Fairchild Semiconductor Corporation

Rev. A2, June 2001

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PRODUCT STATUS DEFINITIONSDefinition of Terms

Datasheet IdentificationAdvance Information

Product StatusFormative or In DesignFirst Production

Definition

This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.

This datasheet contains preliminary data, and

supplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.

This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.

Preliminary

No Identification NeededFull Production

ObsoleteNot In Production

©2001 Fairchild Semiconductor CorporationRev. H3