DESCRIPTION The PE02N05A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. DG GENERAL FEATURES ● VDS =50V,ID =2.8A RDS(ON) <100mΩ @ VGS=10V RDS(ON) < 115mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package SSchematic diagram Marking and pin Assignment Application ●Battery Switch ●DC/DC Converter SOT-23 top view
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter Symbol Limit Unit Drain-Source Voltage 50 V VDS Gate-Source Voltage ±20 V VGS Drain Current-Continuous 2.8 A ID Drain Current-Pulsed (Note 1) 10 A IDM Maximum Power Dissipation 1.7 W PD Operating Junction and Storage Temperature Range -55 To 150 ℃ TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
73.5
℃/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter Symbol Condition
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current
BVDSS IDSS
Min Typ Max Unit
VGS=0V ID=250μA 50 - - V VDS=50V,VGS0V - - 1 μA
WWW.SEMI-ONE.COM
Page 1
Gate-Body Leakage Current On Characteristics (Note 3) Gate Threshold Voltage
VGS(th) IGSS
VGS=±20V,VDS0V PE02N05A
- - ±100 nA VDS=VGS,ID=250μA 1.0 1.5 V 0.5 VGS=10V, ID2.8A - 87 100 mΩ - 95 115 mΩ VGS=4.5V, ID2.8A - VGS=2.5V, I130 D2A 150 mΩ
Drain-Source On-State Resistance Dynamic Characteristics (Note4) Input Capacitance Output Capacitance
Reverse Transfer Capacitance Switching Characteristics (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) Diode Forward Current (Note 2)
RDS(ON)
Clss - 247 - PF VDS=30V,VGS=0V,
Coss - 34 - PF F=1.0MHz
- 19.5 - PF Crss
td(on) - 6 - nS tr - 15 - nS VDD=30V,ID=1.5A
=
VGS=10V,RGEN=1Ω td(off) - 15 - nS tf
- 10 - nS Qg - 6 - nC VDS=30V,ID=2.5A,
Qgs - 1 - nC VGS=4.5V
- 1.3 - nC Qgd VSD
VGS=0V,IS2.5A - - 1.2 V IS - - 3 A =
==
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production
=
WWW.SEMI-ONE.COM
Page 2
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
VddRlDGSVout
td(on)tontr90%PE02N05A
tofftf90%td(off)VinVgsRgenVOUT10%INVERTED10%90%VIN10%50%50%PULSE WIDTH
Figure 2:Switching Waveforms
Figure 1:Switching Test Circuit
TJ-Junction Temperature(℃)
TJ-Junction Temperature(℃)
ID- Drain Current (A) PD Power(W)
Figure 3 Power Dissipation
Rdson On-Resistance(mΩ) Figure 4 Drain Current
ID- Drain Current (A)
Vds Drain-Source Voltage (V)
ID- Drain Current (A)
Figure 5 Output CHARACTERISTICS Figure 6 Drain-Source On-Resistance
WWW.SEMI-ONE.COM
Page 3
Normalized On-Resistance PE02N05A
ID- Drain Current (A)
Vgs Gate-Source Voltage (V)
TJ-Junction Temperature(℃)
Figure 7 Transfer Characteristics
Rdson On-Resistance(mΩ) Figure 8 Drain-Source On-Resistance
C Capacitance (pF)
Vds Drain-Source Voltage (V)
Vgs Gate-Source Voltage (V)
Figure 9 Rdson vs Vgs
Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Figure 10 Capacitance vs Vds
Qg Gate Charge (nC)
Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge Figure 12 Source- Drain Diode Forward
WWW.SEMI-ONE.COM
Page 4
PE02N05A
ID- Drain Current (A)
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
r(t),Normalized Effective Transient Thermal Impedance
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
WWW.SEMI-ONE.COM
Page 5
PE02N05A
SOT-23 PACKAGE INFORMATION
Symbol
NOTES
1. All dimensions are in millimeters.
2. Tolerance ±0.10mm (4 mil) unless otherwise specified
Dimensions in Millimeters
MIN. MAX. A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E 1.200 1.400 E1 2.250 2.550 e 0.950TYP e1 1.800 2.000 L 0.550REF L1 0.300 0.500 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
WWW.SEMI-ONE.COM
Page 6
因篇幅问题不能全部显示,请点此查看更多更全内容
Copyright © 2019- pqdy.cn 版权所有 赣ICP备2024042791号-6
违法及侵权请联系:TEL:199 1889 7713 E-MAIL:2724546146@qq.com
本站由北京市万商天勤律师事务所王兴未律师提供法律服务