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PE02N05A

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 =PE02N05AN-Channel Enhancement Mode Power MOSFET

DESCRIPTION The PE02N05A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. DG GENERAL FEATURES ● VDS =50V,ID =2.8A RDS(ON) <100mΩ @ VGS=10V RDS(ON) < 115mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package SSchematic diagram Marking and pin Assignment Application ●Battery Switch ●DC/DC Converter SOT-23 top view

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Parameter Symbol Limit Unit Drain-Source Voltage 50 V VDS Gate-Source Voltage ±20 V VGS Drain Current-Continuous 2.8 A ID Drain Current-Pulsed (Note 1) 10 A IDM Maximum Power Dissipation 1.7 W PD Operating Junction and Storage Temperature Range -55 To 150 ℃ TJ,TSTG

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient (Note 2)

RθJA

73.5

℃/W

Electrical Characteristics (TA=25℃unless otherwise noted)

Parameter Symbol Condition

Off Characteristics

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current

BVDSS IDSS

Min Typ Max Unit

VGS=0V ID=250μA 50 - - V VDS=50V,VGS0V - - 1 μA

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Gate-Body Leakage Current On Characteristics (Note 3) Gate Threshold Voltage

VGS(th) IGSS

VGS=±20V,VDS0V PE02N05A

- - ±100 nA VDS=VGS,ID=250μA 1.0 1.5 V 0.5 VGS=10V, ID2.8A - 87 100 mΩ - 95 115 mΩ VGS=4.5V, ID2.8A - VGS=2.5V, I130 D2A 150 mΩ

Drain-Source On-State Resistance Dynamic Characteristics (Note4) Input Capacitance Output Capacitance

Reverse Transfer Capacitance Switching Characteristics (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge

Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) Diode Forward Current (Note 2)

RDS(ON)

Clss - 247 - PF VDS=30V,VGS=0V,

Coss - 34 - PF F=1.0MHz

- 19.5 - PF Crss

td(on) - 6 - nS tr - 15 - nS VDD=30V,ID=1.5A

=

VGS=10V,RGEN=1Ω td(off) - 15 - nS tf

- 10 - nS Qg - 6 - nC VDS=30V,ID=2.5A,

Qgs - 1 - nC VGS=4.5V

- 1.3 - nC Qgd VSD

VGS=0V,IS2.5A - - 1.2 V IS - - 3 A =

==

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production

=

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

VddRlDGSVout

td(on)tontr90%PE02N05A

tofftf90%td(off)VinVgsRgenVOUT10%INVERTED10%90%VIN10%50%50%PULSE WIDTH

Figure 2:Switching Waveforms

Figure 1:Switching Test Circuit

TJ-Junction Temperature(℃)

TJ-Junction Temperature(℃)

ID- Drain Current (A) PD Power(W)

Figure 3 Power Dissipation

Rdson On-Resistance(mΩ) Figure 4 Drain Current

ID- Drain Current (A)

Vds Drain-Source Voltage (V)

ID- Drain Current (A)

Figure 5 Output CHARACTERISTICS Figure 6 Drain-Source On-Resistance

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Normalized On-Resistance PE02N05A

ID- Drain Current (A)

Vgs Gate-Source Voltage (V)

TJ-Junction Temperature(℃)

Figure 7 Transfer Characteristics

Rdson On-Resistance(mΩ) Figure 8 Drain-Source On-Resistance

C Capacitance (pF)

Vds Drain-Source Voltage (V)

Vgs Gate-Source Voltage (V)

Figure 9 Rdson vs Vgs

Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Figure 10 Capacitance vs Vds

Qg Gate Charge (nC)

Vsd Source-Drain Voltage (V)

Figure 11 Gate Charge Figure 12 Source- Drain Diode Forward

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PE02N05A

ID- Drain Current (A)

Vds Drain-Source Voltage (V)

Figure 13 Safe Operation Area

r(t),Normalized Effective Transient Thermal Impedance

Square Wave Pluse Duration(sec)

Figure 14 Normalized Maximum Transient Thermal Impedance

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PE02N05A

SOT-23 PACKAGE INFORMATION

Symbol

NOTES

1. All dimensions are in millimeters.

2. Tolerance ±0.10mm (4 mil) unless otherwise specified

Dimensions in Millimeters

MIN. MAX. A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E 1.200 1.400 E1 2.250 2.550 e 0.950TYP e1 1.800 2.000 L 0.550REF L1 0.300 0.500 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane.

5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.

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