专利名称：Process for fabricating a semiconductor
device
发明人：Naoki Komai,Yuji Segawa,Takeshi Nogami申请号：US09784715申请日：20010215
公开号：US20010019892A1公开日：20010906
摘要：A process for fabricating a semiconductor device, which comprises forming, on ametal wiring formed from copper or a copper alloy, a barrier film which functions as adiffusion-preventing film for the metal wiring by an electroless plating method, wherein acatalytic metal film which serves as a catalyst in the electroless plating method isselectively formed on the metal wiring by a displacement plating method using adisplacement plating solution at a temperature in the range of 30° C. or more and lowerthan a boiling point thereof, and the barrier film is selectively formed on the catalyticmetal film by the electroless plating method. It is an object of the present invention, toselectively and uniformly carry out the catalyst activation to the surface of the metalwiring made of copper or a copper alloy by using palladium so as to improve platingproperty of the electroless plating method using a hypophosphite as a reducing agentand the reliability of the wiring.
申请人：KOMAI NAOKI,SEGAWA YUJI,NOGAMI TAKESHI
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