Semiconductor integrated circuit capacitance devic

专利名称：Semiconductor integrated circuit capacitance

device

发明人：Masatake Wada,Naoki Imakita申请号：US138659申请日：20130418公开号：US09202784B2公开日：20151201

专利附图：

摘要：A semiconductor integrated circuit device includes a substrate structure layerincluding a substrate having a well and a diffusion region thereon, an interconnect layerincluding a pair of power supply lines arranged at a preset spacing from the substrate

structure layer; the interconnect layer also including an input side interconnect and anoutput side interconnect between the pair of power supply lines, a standard cell having alogic circuit on the substrate; the logic circuit being electrically connected to the pair ofpower supply lines, the input side interconnect and the output side interconnect, and oneor more capacitances arranged between the substrate structure layer and the

interconnect layer and arranged in a region between the pair of power supply lines, theregion being inclusive of a region superposed with the pair of power supply lines.

申请人：Renesas Electronics Corporation

地址：Kawasaki JP

国籍：JP

代理机构：McGinn IP Law Group, PLLC.

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