您好,欢迎来到品趣旅游知识分享网。
搜索
您的当前位置:首页Data writing and reading method for memory device

Data writing and reading method for memory device

来源:品趣旅游知识分享网
专利内容由知识产权出版社提供

专利名称:Data writing and reading method for

memory device employing magnetic domainwall movement

发明人:Chee-Khong Lim,Eun-Sik Kim申请号:US12801094申请日:20100521

公开号:US20100238698A1公开日:20100923

专利附图:

摘要:A method of data recording and reading for a memory device employingmagnetic domain wall movement. The memory device includes a writing track, an

interconnecting layer formed on the writing track, and a recording track formed on theinterconnecting layer

申请人:Chee-Khong Lim,Eun-Sik Kim

地址:Yongin-si KR,Yongin-si KR

国籍:KR,KR

更多信息请下载全文后查看

因篇幅问题不能全部显示,请点此查看更多更全内容

Copyright © 2019- pqdy.cn 版权所有 赣ICP备2024042791号-6

违法及侵权请联系:TEL:199 1889 7713 E-MAIL:2724546146@qq.com

本站由北京市万商天勤律师事务所王兴未律师提供法律服务