POWER LDMOS SEMICONDUCTOR DEVICE WITH REDUCED ON-R

专利名称：POWER LDMOS SEMICONDUCTOR DEVICE

WITH REDUCED ON-RESISTANCE ANDMANUFACTURING METHOD THEREOF

发明人：Salvatore Cascino,Leonardo

Gervasi,Antonello Santangelo

申请号：US14601081申请日：20150120

公开号：US20150206968A1公开日：20150723

专利附图：

摘要：An electronic semiconductor device including a semiconductor body having a

first structural region and a second structural region, which extends on the first

structural region and houses a drain region; a body region, which extends into the secondstructural region; a source region, which extends into the body region; and a gateelectrode, which extends over the semiconductor body for generating a conductivechannel between the source region and the drain region. The device includes a firstconductive trench extending through, and electrically insulated from, the secondstructural region on one side of the gate electrode; and a second conductive trenchextending through the source region, the body region, and right through the secondstructural region on an opposite side of the gate electrode, electrically insulated fromthe second structural region and electrically coupled to the body region and to thesource region.

申请人：STMICROELECTRONICS S.R.L.

地址：Agrate Brianza IT

国籍：IT

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