Semiconductor memory device and method of forming

专利名称：Semiconductor memory device and method

of forming a layout of the same

发明人：Pan-Suk Kwak申请号：US12078138申请日：20080327

公开号：US20080239781A1公开日：20081002

专利附图：

摘要：A semiconductor memory device having a double-patterned memory cell arraythat includes a plurality of first bit lines spaced apart from each other and having a firstpattern, a plurality of second bit lines spaced apart from each other and having a second

pattern, the second bit lines being between the first bit lines to define an alternatingarray of first and second bit lines, the first and second patterns being different from eachother, a first main memory cell array defined by a first portion of the alternating array, asecond main memory cell array defined by a second portion of the alternating array, bitlines in the first main memory cell array having a substantially same regularity as bit linesin the second main memory cell array, and a dummy array between the first main memorycell array and the second main memory cell array.

申请人：Pan-Suk Kwak

地址：Hwaseong-si KR

国籍：KR

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