Substrate driven field-effect transistor

专利名称：Substrate driven field-effect transistor发明人：Berinder P. S. Brar,Peter M. Asbeck申请号：US11093592申请日：20050329公开号：US07439556B2公开日：20081021

专利附图：

摘要：A substrate driven field effect transistor (FET) and a method of forming thesame. In one embodiment, the substrate driven FET includes a substrate having a sourcecontact covering a substantial portion of a bottom surface thereof and a lateral channelabove the substrate. The substrate driven FET also includes a drain contact above the

lateral channel. The substrate driven FET still further includes a source interconnect thatconnects the lateral channel to the substrate operable to provide a low resistancecoupling between the source contact and the lateral channel.

申请人：Berinder P. S. Brar,Peter M. Asbeck

地址：Newbury Park CA US,San Diego CA US

国籍：US,US

代理机构：Slater & Matsil, L.L.P.

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