Compensation of lithographic and etch proximity ef

专利名称：Compensation of lithographic and etch

proximity effects

发明人：Eisenberg, Juli Hong,Fritzinger, Larry

Bruce,Fu, Chong-Cheng,Kook, Taeho,Wolf,Thomas Michael

申请号：EP90310242.4申请日：19900919公开号：EP04204B1公开日：19971229

摘要：In the manufacture of integrated-circuit devices, patterned features are madeon a substrate by etching a deposited layer. The pattern comprises features which areclosely spaced, as well as others which are more isolated. Etching is in approximateconformance with a lithographically defined resist pattern which in turn is in approximateconformance with a desired pattern. A processing parameter such as, e.g., resist layerthickness is chosen such that an etched pattern is obtained which approximates a desiredpattern more closely than a lithographically defined resist pattern.

申请人：AT & T CORP

地址：US

国籍：US

代理机构：Johnston, Kenneth Graham

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