TCRT1000/TCRT1010
Vishay Semiconductors
Reflective Optical Sensor with Transistor Output
Description
The TCRT1000 and TCRT1010 are reflective sensorswhich include an infrared emitter and phototransistorin a leaded package which blocks visible light.
TCRT1000TCRT1010Features
•Package type: Leaded
•Detector type: Phototransistor •Dimensions:
L 7 mm x W 4 mm x H 2.5 mm •Peak operating distance: 1 mm • • • • • •
e4Applications
ACEC19155Operating range: 0.2 mm to 4 mm
Typical output current under test: IC = 0.5 mADaylight blocking filter
Emitter wavelength 950 nm
Lead (Pb)-free soldering released
Lead (Pb)-free component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
Optoelectronic scanning and switching devices i.e.,index sensing, coded disk scanning etc. (optoelec-tronic encoder assemblies for transmissive sensing).
Order Instructions
Part Number
TCRT1000TCRT1010
RemarksStraight leadsBent leads
Minimum Order Quantity1000 pcs, 1000 pcs/bulk1000 pcs, 1000 pcs/bulk
Absolute Maximum Ratings
Tamb = 25°C, unless otherwise specified
Coupler
Parameter
Total power dissipationAmbient temperature rangeStorage temperature rangeSoldering temperature
2 mm distance to package,t ≤ 5 s
Test condition
Tamb ≤ 25 °C
SymbolPtotTambTstgTsd
Value200- 40 to + 85- 40 to + 100
260
UnitmW°C°C°C
Document Number 83752Rev. 1.6, 04-Sep-06
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TCRT1000/TCRT1010
Vishay SemiconductorsInput (Emitter)
Parameter
Reverse voltageForward currentForward surge currentPower dissipationJunction temperature
tp ≤ 10 µsTamb ≤ 25 °C
Test condition
SymbolVRIFIFSMPVTj
Value5503100100
UnitVmAAmW°C
Output (Detector)
Parameter
Collector emitter voltageEmitter collector voltageCollector currentPower dissipationJunction temperature
Tamb ≤ 25 °C
Test condition
SymbolVCEOVECOICPVTj
Value32550100100
UnitVVmAmW°C
300 P - Power Dissipation (mW) Coupled device 200 Phototransistor 100 IR - diode0 0
95 11071
255075100
Tamb- Ambient Temperature (°C)
Figure1. Power Dissipation Limit vs. Ambient Temperature
Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Coupler
Parameter
Collector currentCross talk current
Collector emitter saturation voltage
1)
Test condition
VCE = 5 V, IF = 20 mA,d = 1 mm (figure 2)
VCE = 5 V, IF = 20 mA (figure 1)IF = 20 mA, IC = 0.1 mA, d = 1 mm (figure 2)
SymbolIC1)ICX2)VCEsat1)
Min0.3
Typ.0.5
MaxUnitmA
10.3
µAV
Measured with the ‘Kodak neutral test card\
2) Measured without reflecting medium
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Document Number 83752
Rev. 1.6, 04-Sep-06
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TCRT1000/TCRT1010
Vishay Semiconductors
Input (Emitter)
Parameter
Forward voltageRadiant intensityPeak wavelengthVirtual source diameter
Test condition
IF = 50 mA
IF = 50 mA, tP = 20 msIF = 100 mA
Method: 63 % encircled energy
SymbolVFIeλPØ
940
1.2
Min
Typ.1.25
Max1.67.5
UnitVmW/srnmmm
Output (Detector)
Parameter
Collector emitter voltageEmitter collector voltageCollector dark current
Test condition
IC = 1 mAIE = 100 µA
VCE = 20 V, IF = 0, E = 0
SymbolVCEOVECOICEO
Min325
200
Typ.
Max
UnitVVnA
Reflecting medium(Kodak neutral test card)~~~d~~~DetectorEmitterACEC95 10893Figure2. Test Condition
Document Number 83752Rev. 1.6, 04-Sep-06
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TCRT1000/TCRT1010
Vishay SemiconductorsTypical Characteristics
Tamb = 25°C, unless otherwise specified
1000 CTR - Current Transfer Ratio (%) 100d = 1 mmVCE= 5 V10I Forward Current (mA) F - 100 10 1
1 0.1 00.20.40.6 0.8 1.01.21.41.61.82.096 11862
0.10.1
95 11076
1 10100
V F - Forward Voltage (V) I F - Forward Current (mA)
Figure3. Forward Current vs. Forward VoltageFigure6. Current Transfer Ratio vs. Forward Current
CTR Relative Current Transfer Ratio rel - 2.0I C - Collector Current (mA) 10 VCE=5VIF= 20 mA1 1.51.00.1 0.50- 25VCE = 5 VI F = 20 mAd = 1 mm02550751000.01 0 95 11077
24 6 8 1095 11074 T amb - Ambient Temperature (°C) d - Distance (mm) Figure4. Relative Current Transfer Ratio vs. Ambient Temperature
Figure7. Collector Current vs. Distance
10.0 I Relative Collector Current Crel - 120 I C - Collector Current (mA) Kodak Neutral Card(White Side)d = 1 mm1.0 Sensing Object100 s 80 60 40 20 0 d = 1 mmVC E=5V IF= 20 mA23456d I F = 50 mA20 mA 10 mA0.1 5 mA2 mA0.01 0.1 95 11075 1 10 100195 11078 V CE - Collector Emitter Voltage (V) s - Displacement (mm) Figure5. Collector Current vs. Collector Emitter VoltageFigure8. Relative Collector Current vs. Displacement
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Document Number 83752
Rev. 1.6, 04-Sep-06
元器件交易网www.cecb2b.com
TCRT1000/TCRT1010
Vishay Semiconductors
Package Dimensions in mm
1476814769Document Number 83752Rev. 1.6, 04-Sep-06
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TCRT1000/TCRT1010
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1.Meet all present and future national and international statutory requirements.
2.Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well astheir impact on the environment.It is particular concern to control or eliminate releases of those substances into the atmosphere which areknown as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSsand forbid their use within the next ten years. Various national and international initiatives are pressing for anearlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the useof ODSs listed in the following documents.
1.Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendmentsrespectively2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the EnvironmentalProtection Agency (EPA) in the USA3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depletingsubstances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 83752
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained hereinor in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of anyinformation provided herein to the maximum extent permitted by law. The product specifications do not expand orotherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressedtherein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by thisdocument or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unlessotherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in suchapplications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resultingfrom such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regardingproducts designed for such applications.
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Document Number: 91000Revision: 18-Jul-08
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